1996 1st International Symposium on Plasma Process-Induced Damage 13-14 May 1996, Santa Clara, California, USA by International Symposium on Plasma Process-Induced Damage (1st 1996 Santa Clara, Calif.)

Cover of: 1996 1st International Symposium on Plasma Process-Induced Damage | International Symposium on Plasma Process-Induced Damage (1st 1996 Santa Clara, Calif.)

Published by Northern California Chapter of the American Vacuum Society in Sunnyvale, CA .

Written in English

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Subjects:

  • Semiconductor wafers -- Congresses.,
  • Semiconductors -- Effect of radiation on -- Congresses.,
  • Plasma radiation -- Congresses.

Edition Notes

Book details

StatementKim P. Cheung, Moritaka Nakamura, and Calvin T. Gabriel, editors ; technical co-sponsors, IEEE/Electron Devices Society, American Vacuum Society, Japanese Society of Applied Physics.
ContributionsCheung, Kin P., Nakamura, Moritaka., Gabriel, Calvin T., IEEE Electron Devices Society., American Vacuum Society., Ōyō Butsuri Gakkai.
Classifications
LC ClassificationsTK7871.85 .I5834 1996
The Physical Object
Pagination237 p. :
Number of Pages237
ID Numbers
Open LibraryOL1015683M
ISBN 100965157709, 0780330617
LC Control Number96068444

Download 1996 1st International Symposium on Plasma Process-Induced Damage

1st International Symposium on Plasma Process-Induced Damage: MaySanta Clara, California, USA by Kin P. Cheung (Editor), Moritaka Nakamura (Editor), Calvin T. Gabriel (Editor) & 0 more4/5(1).

1st International Symposium on Plasma Process-Induced Damage: MaySanta Clara, California, USA Author: Kin P Cheung ; Moritaka Nakamura ; Calvin T Gabriel ; IEEE Electron Devices Society. International Symposium on Plasma Process-Induced Damage: [proceedings].

Also Titled. IEEE/ IEE Electronic Library. Creator. International Symposium on Plasma Process-Induced Damage. Other Creators. IEEE Electron Devices Society American Vacuum Society Ōyō Butsuri Gakkai (Japan) Published.

Plasma- and Process-Induced Damage, International Symposium on. [IEEE Xplore (Online service);] Full text from IEEE/IET Electronic Library (IEL): to present International Symposium on.". Be the first. Confirm this request. Proceedings of IEEE International Electron Devices Meeting Published: Effect of trapping on the critical voltage for degradation in GaN high electron mobility transistorsCited by: Plasma- and Process-Induced Damage, International Symposium on Copy 1996 1st International Symposium on Plasma Process-Induced Damage book Link.

Browse Title List. Sign up for Conference Alerts. Proceedings. All Proceedings. Popular. Proceedings of 1st International Symposium on Plasma Process-Induced Damage. DOI: /PPID Quick Links. Search for Upcoming Conferences.

Increasing demands for silicon-based faster microprocessors and denser memories have been historically met by reducing both the thickness of the gate dielectric and the lateral dimensions of logic devices so that many more can be packed on a semiconductor chip [1].Cited by: 4.

; DOI: /PPID; Plasma Charging Damage: An Overview @article{McVittiePlasmaCD, title={Plasma Charging Damage: An Overview}, author={James P. McVittie}, journal={Proceedings of 1st International Symposium on Plasma Process-Induced Damage}, year={}, pages={} } James P.

McVittie. 7th International Symposium on Plasma- and Process- Induced Damage, JuneHawaii. gate, it is considered a charge retention failure. Previously observed damage facts were as follows: 1) Damage was isolated to the plasma via etch step, during which metal and poly antennas become exposed to the plasma.

2) Over-etching at the plasma via etch step. International Symposium on Plasma Process-Induced Damage. International Symposium on Plasma Process-Induced Damage (OCoLC) Material Type: Conference publication: Document Type: Journal / Magazine / Newspaper: All Authors / Contributors: International Symposium on Plasma Process-Induced Damage.; IEEE Electron Devices Society.

Lukaszek and A. Birrell, Quantifying Wafer Charging During Via Etch,1st International Symposium on Plasma Process-Induced Damage, Santa Clara, CA, MayS. Reno, R. Bammi, Using CHARM-2 Wafers To Increase Reliablility In Ion Implant Processing, IEEE International Integrated Reliability Workship Final Report, pp.

Reduction of plasma induced damage in an inductively coupled plasma using pulsed source power Hashimoto, Y.

Hikosaka, A. Hasegawa, and M. Nakamura, 1st International Symposium on Plasma Process Induced Damage (AVS, New York, ), p.

Cited by: Plasma charging induced gate oxide damage during metal etching and ashing. Paper presented at Proceedings of the 1st International Symposium on Plasma Process-Induced Damage, P2ID, Santa Clara, CA, USA.

The Effect of Guard Line on Plasma Damage. Plasma Process-Induced Damage, 1st International Symposium on. This suggests that to have effective control over plasma charge damage. J.-P. Carrere, J.-C. Oberlin, M. Haond, in: Proceedings of the International Symposium on Plasma Process-Induced Damage (AVS.

Plasma Etching Induced Damage to Strained Si/SiGe/Si heterostructure Proceedings of 1st International Symposium on Plasma Process-Induced Damage. Article #: Date of Conference: May Date Added to IEEE Xplore: 06 August ISBN Information: Print ISBN: INSPEC Accession Number: Cited by: 2. Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the main plasma processes which induce charging damage to gate oxides during the VLSI processes.

All the previous studies, however, describe the charging phenomena only at the beginning of PECVD process, when a very thin oxide layer covers the metal lines. Quick experimental technique in estimating the cumulative plasma charging current with MOSFET and determining the reliability of the protection diode in the plasma ambient.

Paper presented at Proceedings of the 1st International Symposium on Plasma Process-Induced Damage, P2ID, Santa Clara, CA, USA. Evaluation of charging damage test structures for ion implantation processes 1st International Symposium on Plasma Process-Induced Damage, Santa Clara, CA (NCCAVS, Sunnyvale, CA, 2nd International Symposium on Plasma Process-Induced Damage, Monterey, CA (NCCAVS, Sunnyvale, CA, ), pp.

–Cited by: "A New Etching Method for Reducing the Electron Shading Damage Using ICP Etcher", S. Tabara, First International Symposium on Plasma Process-Induced Damage, MaySanta Clara, CA p. 51 "Role of Temperature in Process-Induced Charging Damage in Sub-micron CMOS Transistors" T.

Brozek, Y. Chan, C. Viswanathan IEDM p. DOI: /ICSICT Corpus ID: Plasma inducted wafer arcing in back-end process and the impact on reliability @article{LiPlasmaIW, title={Plasma inducted wafer arcing in back-end process and the impact on reliability}, author={Po Li and Jing-Wei Peng and Yung-Cheng Wang and David Wei Zhang}, journal={ IEEE 11th International.

It was recently reported that plasma process-induced damage to metal–oxide–silicon field-effect transistors (MOSFETs) comprises a damage mechanism that involves alternating-current (ac) stressing of the oxide and the oxide/silicon interface.

The study reported herein is aimed at establishing signatures of MOSFET damage induced by ac stressing applied at conditions that emulate plasma Cited by: 6. Shi J, Rounds S, Noble T, Desarno M, Fink S, Shaner D, et al.

Proceedings of the first international symposium on plasma process induced damage, Santa Clara, CA, May 13–14, p. Google ScholarCited by: 1. 4th International Symposium on Plasma Process-Induced Damage. This text constitutes the proceedings from the International Symposium on Plasma Process-Induced Damage, which took place in Topics covered include plasma equipment, electron shading, device characterization and backend process : 4th International Symposium on Plasma Process-Induced Damage [Thuy Dao, M.

Koyanagi, Terence Hook] on *FREE* shipping on qualifying offers. 1st International Symposium on Plasma Process-Induced Damage: MaySanta Clara, California, USA by International Symposium on Plasma Process-Induced Damage ().

Proceedings of the First International Symposium on Plasma Process-Induced Damage, 13–14 MaySanta Clara, CA; Google Scholar Proceedings of the Second International Symposium on Plasma Process-Induced Damage, 13–14 MayMonterey, CA. Google Scholar; 3. Kawamoto, Proceedings of the Seventh Symposium on Dry Process, Tokyo, Cited by: “Application of Plasma Charging Probe to Production HDP CVD Tool”, G.

Roche and J. McVittie, First International Symposium on Plasma Process-Induced Damage, May 13–14Santa Clara, CA p. 71 Google ScholarAuthor: Daniel M. Dobkin, Michael K. Zuraw.

"Process Induced Gate Oxide Damage Issues in Advanced Plasma Chemical Vapor Deposition Processes", D. Cote, S. Nguyen, V. McGahay, C. Waskiewicz, S. Chang, A. Stamper, P. Weigand, N. Shoda and T. Matsuda, First International Symposium on Plasma Process-Induced Damage, MaySanta Clara, CA p.

61 Return to Tutorial Table of Contents. Ma et al., Proceedings of the Eight International Symposium on Plasma- and Process-Induced Damage, (unpublished). Google Scholar; 2.

Fisher et al., Proceedings of the Seventh International Symposium on Plasma- and Process-Induced Damage, (unpublished).

Google Scholar; 3. by: 4. A Salah, OO Awadelkarim, YD Chan and J Werking,"Inductive damage and the impact of rf power and magnetic field during MERIE processes", 1ST INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, pp.

Proceedings of the International Symposium on Plasma Process-Induced Damage,pp. – Google Scholar T.B. Hook, D. Harmon, W. Lai, Gate oxide damage and charging characterization in a mm, Cited by: 6. The mechanism responsible for charging damage to integrated circuit device insulators is treated as a plasma phenomenon, in which the beam/plasma drives.

2nd International Symposium on Plasma Process-Induced Damage MayMonterey, CA wafer bias was applied to give the same dc bias, around V, as the metal etching case.

Results and discussion Ar plasma case (no wafer bias) Figure 2 shows the data from the positive voltage sensors. It can be seen that the baseline voltage response.

; DOI: /ICSICT Plasma inducted wafer arcing in back-end process and the impact on reliability @article{LiPlasmaIW, title={Plasma inducted wafer arcing in back-end process and the impact on reliability}, author={Po Li and Jing-Wei Peng and Yung-Cheng Wang and David Wei Zhang}, journal={ IEEE 11th International Conference on.

Power dependence of gate oxide damage from electron shading effect in high-density-plasma metal etching. Krishnan, B. Hallet, J. Schell, Proceedings of the 1st International Symposium on Plasma Process-Induced Damage, Northern California Chapter of the American Vac.

Society, CA,p. Cited by: 2. Surface Photovoltage and Contact Potential Difference Imaging of Defects Introduced by Plasma Processing of IC Devices Plasma Process-Induced Damage, 1st International Symposium on. Cite. An analytical model of the time-dependent currents of a plasma allows the determination of the physical mechanisms and dependencies of charging damage in Plasma Immersion Ion Implantation (PIII).

Electron shading, or topography-dependent charging, occurs during plasma exposure of wafers with high-aspect-ratio features due to an imbalance between the electron and ion currents that reach the feature bottoms. High-aspect-ratio pit structures were exposed to an electron cyclotron resonance plasma.

The surface potential of the structures after plasma exposure was Cited by: Symposium on VLSI Circuits digest of technical papers, International Conference on Indium Phosphide and Related Materials May, University of Tsukuba, 7th International Symposium on Plasma- and Process-Induced Damage June, Maui.

Charging damage in floating metal-insulator-metal capacitors. Plasma- and Process-Induced Damage, 6th International Symposium on 6th international Symposium on Plasma Process-Induced.Simplistic calculations of current injection through thin gate oxide during metal etch have been presented by T.

Kinoshita, S. Krishnan, W. W. Dostalik, and J. P. McVittie, Proceedings of the 2nd International Symposium on Plasma Process-Induced Damage, Monterey, CA,p. Cited by: The ninth annual International Symposium on Plasma- and Process-Induced Damage will be held May in Austin, Texas.

This conference, popu-larly known as P2ID, has served for nearly a decade to highlight issues surrounding all aspects of process-induced damage in semiconductor fabrication.

Since its inception inthis.

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